Performance analysis of a 127-micron pixel large-area TFT/photodiode array with boosted fill factor
نویسندگان
چکیده
Sensor fill factor is one of the key pixel design requirements for high performance imaging arrays. In our conventional imaging pixel architecture with a TFT and a photodiode deposited in the same plane, the maximum area that the photodiode can occupy is limited by the size of the TFT and the surrounding metal lines. A full fill factor array design was previously proposed using a continuous sensor layer. Despite the benefits of 100% fill factor, when applied to large-area applications, this array design suffers from high parasitic line capacitances and, thus, high line noise. We have designed and fabricated an alternative pixel structure in which the photodiode is deposited and patterned over the TFT, but does not overlap with the lines underneath. Separating the diode from the TFT plane allows extra space for an additional TFT which can be used for pixel reset and clipping excessive charge in the photodiode developed under high illumination. This reduces memory effect by 250%. The yield and the reliability are expected to improve as well since the TFTs and lines are buried underneath the diode. With the increased fill factor, we collect 50% more electrons per pixel, thereby improving the signal to noise ratio. The maximum signal to noise ratio is achieved when the increased signal and the undesirable parasitic capacitance on the data line are best optimized. Linearity, sensitivity, leakage, and MTF characteristics of a prototype X-ray imager based on this architecture are presented.
منابع مشابه
Small CMOS Pixel Design with Single Row Line
A number of small size pixels for CMOS image sensors using just one row line to control reset and select transistors has been designed, fabricated and characterized. The elimination of an additional control line and the associated contacts provides more pixel area that can be allocated to the photodiode. On one hand, this gives a substantially higher pixel fill factor, consequently higher quant...
متن کاملCmos Active Pixel Image Sensor with Combined Linear and Logarithmic Mode Operation
An active photodiode 4 x 64 image sensor array was designed and fabricated using a 0.5 μm CMOS process. The sensor includes on-chip timing and control as well as correlated double sampling for readout. The operation of the sensor is selectable between a linear integration mode and a logarithmic mode using the same array of pixels. INTRODUCTION In recent years, CMOS image sensors have generated ...
متن کاملSuper Small, Sub 2μm Pixels for Novel CMOS Image Sensors
Pixel shrink is a driving force for novel CMOS image sensor development used in mobile and DSC applications. This paper describes the latest results in super small, sub 2μm pixel development at Micron Technology, Inc. Presented are results of optical and electrical characterization of super small pixels and their respective pixel arrays. The paper considers general light signal characteristics,...
متن کاملA 35mm 13.89 Million Pixel CMOS Active Pixel Image Sensor
This paper discusses a 13.89 million pixels CMOS image sensor for digital SLR cameras. The pitch of the 3transistor active pixel is 8 microns. The sensor has a full well charge of 117K electrons and 33 electrons temporal noise, and a dynamic range of 71 dB. The fixed pattern noise is 0.14% RMS, obtained by an on-chip correction circuit. Color filters have been optimized for best photographic pe...
متن کاملArchitecture and Development of Next Generation Small BSI Pixels
This paper presents recent results from the development of our next generation small back side illuminated (BSI) pixels. According to the trend of pixel scaling [1], next generation small pixels will be at about 1.1um to 0.9um in size, achieving higher performance, and offering more advanced features than current pixels. Presented are the basic optical and electrical characteristics of the next...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2004